著者
Sanai Tatsunori Ito Keita Toko Kaoru Suemasu Takashi
出版者
Elsevier B.V.
雑誌
Journal of crystal growth (ISSN:00220248)
巻号頁・発行日
vol.357, pp.53-57, 2012-10
被引用文献数
13

We attempted to grow CoxFe4−xN epitaxial thin films on SrTiO3(001) substrates by molecular beam epitaxy supplying solid Co and Fe and a radio frequency N2 plasma, simultaneously. The composition ratio of Co/Fe in CoxFe4−xN was controlled by changing the weight ratio of Co to Fe flakes in the crucible of the Knudsen cell used. We confirmed epitaxial growth of CoxFe4−xN (0.4<x<2.9) thin films by reflection high-energy electron diffraction and θ−2θ X-ray diffraction patterns. The in-plane lattice parameter of the CoxFe4−xN films was almost the same as the out-of-plane lattice parameter, and they decreased with increasing Co composition, following Vegard's law.

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