著者

Toko K. Kurosawa M. Saitoh N. Yoshizawa N. Usami N. Miyao M. Suemasu T.

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.101, no.7, pp.072106, 2012-08

被引用文献数

88 20

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(111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 °C) and the native-oxidized Al (AlOx) diffusion-control layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.