- 著者
- Nakazawa K. Toko K. Saitoh N. Yoshizawa N. Usami N. Suemasu T.
- 出版者
- Electrochemical Society
- 雑誌
- ECS journal of solid state science and technology (ISSN:21628769)
- 巻号頁・発行日
- vol.2, no.11, pp.Q195-Q199, 2013-08
- 被引用文献数
- 17
Low-temperature (350°C) crystallization of amorphous Ge films on SiO2 was investigated using Al-induced layer exchange (ALILE) process. Thicknesses of Ge and catalytic Al layers were varied in the range of 30–300 nm, which strongly influenced the ALILE growth morphology. Based on the study, the Ge thickness was adjusted to 40 nm while the Al thickness was adjusted 50 nm. This sample satisfied both of the surface coverage of polycrystalline-Ge and the annihilation of randomly oriented Ge regions. Moreover, the enhancement of the heterogeneous Ge nucleation improved the (111) orientation and the grain size. As a result, the area fraction of the (111)-orientation reached as high as 97% and the average grain size as large as 70-μm diameters. This (111)-oriented Ge layer with large-grains promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.
1 0 0 0 OA Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
- 著者
- Baba M. Toh K. Toko K. Hara K.O. Usami N. Saito N. Yoshizawa N. Suemasu T.
- 出版者
- Elsevier B.V.
- 雑誌
- Journal of crystal growth (ISSN:00220248)
- 巻号頁・発行日
- vol.378, pp.193-197, 2013-09
- 被引用文献数
- 5 1
BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.
- 著者
- Toko K. Kurosawa M. Saitoh N. Yoshizawa N. Usami N. Miyao M. Suemasu T.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.101, no.7, pp.072106, 2012-08
- 被引用文献数
- 88 20
(111)-oriented Ge thin films on insulators are essential for advanced electronics and photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films (50-nm thickness) on insulators focusing on the annealing temperature and the diffusion controlling process between Ge and Al. The (111)-orientation fraction of the grown Ge layer reaches as high as 99% by combining the low-temperature annealing (325 °C) and the native-oxidized Al (AlOx) diffusion-control layer. Moreover, the transmission electron microscopy reveals the absence of defects on the Ge surface. This (111)-oriented Ge on insulators promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.