- 著者
- Umeda T. Okonogi K. Ohyu K. Tsukada S. Hamada K. Fujieda S. Mochizuki Y.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.88, pp.253504, 2006-06
- 被引用文献数
- 25 18
The variable retention time phenomenon has recently been highlighted as an important issue in dynamic random access memory (DRAM) technology. Based on electrically detected magnetic resonance and simulation studies, we suggest that a single Si vacancy-oxygen complex defect is responsible for this phenomenon, when the defect is embedded in the near surface drain-gate boundary of a DRAM cell.