著者

Natori Kenji Kimura Yoji Shimizu Tomo

出版者

American Institute of Physics

雑誌

Journal of applied physics (ISSN:00218979)

巻号頁・発行日

vol.97, no.3, pp.034306, 2005-02

被引用文献数

94

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A general expression of the current-voltage characteristics of a ballistic nanowire field-effect transistor (FET) is derived. At T=0, the conductance, which is equal to the quantum conductance multiplied by the number of channels at zero bias, decreases stepwise toward current saturation as the drain bias is increased. The current-voltage characteristics of a single-wall carbon nanotube FET in ballistic conduction are discussed based on the band structure of the nanotube. When both the gate overdrive and the drain bias are equal to 1 V, the device made of a (19,0) nanotube and a 2-nm high-k gate insulator (epsilon=40epsilon(0)) flows a current of 183 muA, which amounts to a current density 48 times as large as the counterpart of a silicon device. The high performance originates from a high carrier density due to the enhanced gate capacitance, and a large carrier velocity caused by the large group velocity of the original graphene band. Quantum capacitance also plays an important role in the device's characteristics.