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1 0 0 0 OA Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

著者
Y. Nakabayashi M. Saitoh T. Ishihara T. Numata K. Uchida J. Koga
雑誌
2010 International Conference on Solid State Devices and Materials
巻号頁・発行日
2015-09-17