Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

doi:10.7567/SSDM.2010.C-5-3

1 0 0 0 OA Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

著者: Y. Nakabayashi M. Saitoh T. Ishihara T. Numata K. Uchida J. Koga
雑誌: 2010 International Conference on Solid State Devices and Materials
巻号頁・発行日: 2015-09-17

2021-01-21 10:30:44
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Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance/2010 International Conference on Solid State Devices and Materials - Confit https://t.co/Bvhn2O2TOJ

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