This paper introduces novel high-speed and low-power boosted level converters for use in dual-supply systems. The proposed level converters adopt a voltage boosting at the gate of pull-down transistors to improve driving speed and reduce contention problem. Comparison results in a 0.13-µm CMOS process indicated that the proposed level converters provided up to 70% delay reduction with up to 57% power-delay product (PDP) reduction as compared to conventional level converters.