著者

AKIMA Hisanao SATO Shigeo NAKAJIMA Koji

出版者

一般社団法人電子情報通信学会

雑誌

IEICE transactions on electronics (ISSN:09168524)

巻号頁・発行日

vol.87, no.5, pp.832-834, 2004-05-01

被引用文献数

1

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A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.