著者

Nakayama Kazuya Matsuda Hideo

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.37, no.9, pp.4751-4757, 1998-09-15

被引用文献数

3

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A new high-power (4500 V) planar metal oxide semiconductor (MOS) device is fabricated and its properties are evaluated. It has low forward voltage drop and a large reverse bias safe operating area (RBSOA), and allows easy MOS control. These properties are superior to those of the conventional insulated gate bipolar transistor (IGBT) and the gate turn-off thyristor (GTO). This is due to the conductivity modulation enhancement effect resulting from an extremely wide gate electrode, which increases the hole storage and the electron injection. At the same time, the junction field effect transistor (JFET) resistance effect does not affect the forward voltage drop. The rate of increase of the off-state voltage (dV_D/dt) during the turn-off process affects RBSOA markedly, therefore, it is important to set the gate resistance to an appropriate value. The press pack device that includes 20 chips of this device and 10 fast recovery diode chips can turn off a current of 1200 A at 3600 V DC voltage supply without a snubber circuit.