著者

Nagase Toshimi Ooie Toshihiko Makita Yoji KASAISHI Shuji NAKATSUKA Masahiro MIZUTANI Nobuyasu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.40, no.11, pp.6296-6303, 2001-11-15

被引用文献数

1 9

---

Morphology, structure and photoluminescence (PL) properties of zinc oxide (ZnO) films prepared by KrF-excimer-laser irradiation of sol-gel-derived precursors were studied. The precursors with a film thickness of 100 or 180 nm were irradiated by the laser at various energy fluences (Ef). Atomic force microscopy and transmission electron microscopy observations revealed that the laser irradiation at an Ef ≧100mJ/cm^2 produced crystal growth of close-packed ZnO crystals in an upper layer. Laser irradiation at a high Ef (150mJ/cm^2) of the thinner precursor produced a remarkable crystallization throughout the film, resulting in larger grain size and smooth film surface. Our observation results suggest that the crystallization proceeds by sintering or solidification via melting. The films obtained at Ef ≧ 100mJ/cm^2 showed green PL. The PL spectra were not significantly influenced by the excitation wavelength except for the thinner film irradiated at a high Ef (150mJ/cm^2); it showed a striking increase in the green PL intensity when excited at 275 nm instead of 325 nm. The unique excitation-wavelength dependence may be related to its characteristic threshold of electron excitation.

著者

Mohri Akihiro Yuyama Tetsumori Tanaka Hitoshi HIGAKI Hiroyuki YAMAZAWA Yohei MICHISHITA Toshinori

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.39, no.12, pp.6726-6731, 2000-12-15

被引用文献数

1

---

Particles of a low current beam can be accumulated in a harmonic potential well in a high vacuum environment when they are repelled back by a local rf electric field of the frequency close to the bounce motion in the well. Here, proper damping mechanisms for the repelled particle blobs are neccessary to suppress their bounce motions. This stacking method was experimentally proved for electron beams of 1.1μA using a Multi-Ring-Electrode trap and the results were compared with numerical estimations based on a single particle model. The observed damping was much larger than the estimated one from the resistive wall effect. The stacking efficiency was nearly the same as the estimated one at the stacked number N less than 1×10^7 but it decreased with N. Experimentally obtained relationship amongst the stacked number, the incident beam energy, the rf frequency and its amplitude behaved qualitatively in the same way as the numerical results. The accumulation proceeded until the well was filled up with electrons.

著者

Chen Liang–Yao Hou Xiao–Yuan Huang Da–Ming Hao Ping–Hai Zhang Fu–Long Feng Xing–Wei Qian You–Hua Wang Xun

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.33, no.4, pp.1937-1943, 1994

被引用文献数

9

---

Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons, but give no evidence of a strong interband transition existing in the visible region, especially at the 1.8-eV PL peak position, as suggested by the quantum size effect. The Lorentz oscillator and Bruggeman effective medium approximation (EMA) models were used in data analyses. Calculations indicate that if strong interband transition occurs, an optical structure can be recognized in the spectra, but it was not seen in the experiments. Therefore, a contradiction exists in the PL and optical absorption experiments. Except for other mechanisms, the calculations show that the layer dispersion effect may result in a shift of the luminescence peak for the porous Si. The 1.8-eV PL peak, not always shifted significantly but often seen with consistency in other material structures, strongly indicates the same origin of visible luminescence as those suggested in the literature. A possible mechanism for the luminescence and Raman enhancement as well as the photon trap phenomenon was discussed, and was attributed mainly to random multiple micro-reflections occurring in the porous-Si layer that has extremely large internal micro surfaces.

著者

Kirianov Andrei Hagiwara Tomoya Kishi Hiroshi OHSATO Hitoshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.11, pp.6934-6937, 2002-11-30

参考文献数

8

著者

Yoh Kanji Taniguchi Hiroaki Kiyomi Kazumasa Inoue Masataka

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.30, no.12, pp.3833-3836, 1991

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We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/InAs/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/GaSb/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 &mu;m-gate-length GaSb p-channel HFET and 1.2 &mu;m-gate-length InAs n-channel HFETs showed decent <I>I</I>-<I>V</I> characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.

著者

SEWELL Harry

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.12, pp.6622-6630, 1995-12-01

参考文献数

3

被引用文献数

4

---

This paper reviews all the major aspects of successfully implementing a &ldquo;mix and match&rdquo; (Deep-UV/I-line, stepper/scanner) strategy. The resolution and linewidth-control limits of I-line are quantified for a number of the process levels and compared with the capabilities of Deep-UV step-and-scan. This analysis predicts the typical mix of steppers and scanners in a 256 MBit production line for 250 nm lithography. A step-by-step procedure to achieve and monitor successful matching is reviewed. The procedure begins by defining a &ldquo;golden system&rdquo;, which is used to produce reference wafers for the setup and monitoring of all the systems being mixed and matched. The reference wafers are used to ensure that the pre-aligners of the systems are calibrated and that offsets are adapted to allow the transfer of wafers between systems. The wafers are also used to match both wafer-stage grid and exposure-field distortions. The matching of both wafer-grid and stepper-field distortions are reviewed. The implementation of stage correction-tables is demonstrated. It is indicated that grid matching to better than 10 nm is achievable. It is also indicated that the dynamic scanning of a step-and-scan system allows the monitoring and correction of such typical stepper problems as field magnification and rotation. The critical aspects of multi-field matching between stepper and scanner are analyzed. The key factors that allow the successful overlaying of large, single, scanned fields with multiple, small, stepped fields are reviewed. The total overlay accuracy achieved using step-and-scan, and &ldquo;mix-and-match&rdquo; is analyzed and demonstrated.

著者

MAGANE Mitsuo ITABASHI Naoshi NISHIWAKI Nobuki GOTO Toshio YAMADA Chikashi HIROTA Eizi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.5, pp.L829-L832, 1990-05-20

被引用文献数

2 31

---

Infrared diode laser absorption spectroscopy (IRLAS) was established as the measurement method for the CF radical density. The absolute density of the CF radical and its pressure dependences were measured in DC pulsed CF_4/H_2 discharge plasma. Moreover, from the analysis of the decay parts of the observed transient absorption waveforms of the CF radical, the CF radical was shown to be removed mainly by a diffusion process in the present plasma, yielding the diffusion coefficients D(CF in H_2) and D(CF in CF_4).

著者

Ogai Keiko Kimura Yoshihide Shimizu Ryuichi Ishibashi Kouji Aoyagi Yoshinobu Namba Susumu

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.30, no.11, pp.3272-3276, 1991-11-20

被引用文献数

6

---

A novel type of electron blprism was made using a microprocess technique. This electron biprism is composed of several filaments lined in parallel on a silicon nitride membrane. Using this type of multi-biprism, we observed an electric field by electron interferometry and confirmed the potentiality of extending this technique to a local electric field.

著者

Fillard Jp Montgomery P. Gall P. Asgarinia M. Bonnafe J.

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.27, no.3, pp.384-388, 1988-03-20

被引用文献数

5

---

Careful measurements of the changes induced by photoquenching in the infra red transmission image of GaAs wafers at Liquid Nitrogen temperature shows an important enhancement of the mean light level and disappearance of the usual fourfold feature; but it also shows that the contrast of the pattern (cell structure) is not affected at all. The contribution of EL2 centres to the image is questioned; it is deduced from these results that photoquenchable EL$^{0}2$ centres are slightly more abundant in the cells than in the walls. In large cell materials an intermediate zone is found surrounding the cells and containing higher EL$^{0}2$ densities. This sheds new light on the role of the dislocations; these results are discussed and compared with etching and luminescence images.

著者

Yamamoto Keiji

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.4, pp.2043-2048, 1995-04-15

参考文献数

10

被引用文献数

1

---

A mechanical stress simulator for surface-mount devices was developed, which employed the finite-element method. The moisture distribution stage can calculate the moisture distribution of the LSI package exposed to temperature and humidity conditions. The heat conduction stage determines the time-dependent temperature distribution of the package immersed in a solder bath. Using the moisture and temperature distributions thus calculated, the mechanical stress stage gives the mechanical stress distribution in the package. Two groups of samples were prepared for solder dipping experiments. In one group, after dry baking for initialization, samples absorbed moisture by exposure at 30&deg;C 85% (absorption process). In the other group, samples were exposed at 85&deg;C 85% for 168 h and then dry-baked at 70&deg;C (desorption process). These two groups have different moisture distributions in their packages. The results of solder dipping experiments are analyzed from the calculated mechanical stress values. In the absorption process, calculated maximum von Mises equivalent stress over the sectional molding compound $\bar{\sigma}_{\rm max}$ increases monotonically with absorption time. Then, $\bar{\sigma}_{\rm max}$ approaches its saturated value as absorption time tends to infinity. In the desorption process, $\bar{\sigma}_{\rm max}$ decreases with desorption time and approaches the thermal stress value when desorption time tends to infinity. These calculations explain the effect of moisture distribution on package cracking.

著者

Araki Hisashi * Anvar Saiki Eiji Yamasaki Nobuo Yakushi Kyuya Yoshino Katsumi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.34, no.8, pp.L1041-L1044, 1995-08-15

参考文献数

22

被引用文献数

16

---

Superconductivity in poly(3-alkylthiophene)- C60 composite (PAT- C60) is found upon doping by potassium from vapor phase. The superconducting (SC) transition at T C=17 K is detected by superconducting quantum interference device (SQUID), which showed 0.8% of SC fraction for C60 content of 5 mol%. An exceptionally strong low-field microwave absorption (LFMA) implies the existence of granular SC phase. A rather small hysteresis of LFMA indicates the important role of the Josephson weak link network, probably formed between SC K xC60 clusters separated by conductive K xPAT barriers. ESR of PAT(C60) yK x composite shows two types of lines: one from negative polarons P- in PAT chains, and another assigned to K xC60 clusters and C1-60 radical.

著者

OHMI Tadahiro

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.33, no.12, pp.6747-6755, 1994-12-30

被引用文献数

11 21

---

In addition to three-terminal devices such as metal oxide semiconductor (MOS) transistors and bipolar transistors, the introduction of four-terminal devices such as neuron MOS transistor is essentially required for the realization of intelligent ULSI systems which is most crucial for electronics in the 21st century. Four-terminal devices will allow us to make ULSI hardware more flexible, real-time programmable, and thus more intelligent based on bi-nary multi-valued analog-merged hardware computation algorithm. For such systems to work, we must establish high-accuracy device fabrication processes based on the concept of ultraclean technology. The simultaneous fulfillment of three principles, viz. ultraclean wafer surface, ultraclean processing environment, and perfect process-parameter control, is the key to high-performance processes for fabricating advanced subhalf-micron and sub-quarter-micron ULSI devices. Advanced process technologies have been realized for the first time by ultraclean processing, making it possible to establish total low-temperature processing, such as gate oxidation at 45O℃, implanted region anneal at 45O℃, BPSG film reflow at 45O℃ and single-crystal silicon epitaxy with simultaneous doping at 3OO℃ by introducing very well regulated ion bombardment during processing which is most essential for obtaining high-performance subhalf-micron and subquarter-micron ULSI.

著者

Usui Akira Sunakawa Haruo Sakai Akira YAMAGUCHI A. Atsushi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.36, no.7, pp.L899-L902, 1997-07-15

被引用文献数

113 792

---

Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO_2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO_2 mask. As a result, GaN layers with a dislocation density as low as 6 × 10^7 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.

著者

MIURA Noboru KAWANISHI Mitsuhiro MATSUMOTO Hironaga NAKANO Ryotaro

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.11, pp.L1291-L1292, 1999-11-15

被引用文献数

63 94

---

The high-luminance blue emitting electroluminescent (EL) devices which have been satisfied with the requirement for full color displays were obtained. BaAl_2S_4:Eu thin-film EL devices as the new blue emitting EL phosphor was prepared by the two targets pulse-electron-beam evaporation. The maximum luminance level was 65 cd/m^2 under the 50 Hz-pulse voltage. The EL spectrum had a blue emission band with a peak around 475 nm due to the 5d-4f transition for Eu^<2+> ion. The Commission Internationale de l'Eclairage (CIE) color coordinates of BaAl_2S_4:Eu EL device were x=0.12 and y=0.10.

著者

YANG L. W. WRIGHT P. D. SHEN H. LU Y. BRUSENBACK P. R. KO S. K. CALDERON L. HARTZLER W. D. HAN W. Y. DUTTA M. CHANG W. H.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.32, no.10, pp.L1400-L1402, 1993-10-01

被引用文献数

1

---

Submicron heterojunction bipolar transistors (HBTs) with maximum frequency of oscillation, f_<MAX>, of 91 GHz have been fabricated using a self-aligned technique and a very heavily carbon-doped (10^<20> cm^<-3>) base layer. Since the quenching of photoluminescence (PL) intensity in heavily-doped Cabs is mainly due to nonradiative recombination in the bulk material, while contribution from surface recombination is negligible, the use of a heavily carbon-doped base layer in AlGaAs/GaAs HBTs minimizes the influence of surface recombination in the extrinsic base region. Thus, for HBTs with a heavily doped base layer, the "emitter size effect" (degradation of HBT current gain) is greatly reduced when the emitter width is scaled down to submicron (0.6 μm) dimensions.

著者

SUZUKI Shoji SATO Shigeru EJIMA Takeo MURATA Katsutoshi KUDO Yuji TAKAHASHI Takashi KOMATSUBARA Takemi SATO Noriaki KASAYA Mitsuo SUZUKI Takashi KASUYA Tadao SUGA Shigemasa MATSUBARA Hideki SAITO Yuji KIMURA Akiko SODA Kazuo ONUKI Yoshichika MORI Tamiko KAKIZAKI Akito ISHII Takehiko

出版者

社団法人応用物理学会

雑誌

JJAP series (ISSN:09149090)

巻号頁・発行日

vol.8, pp.59-80, 1993-01-31

著者

JACAK Lucjan

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Supplement (ISSN:00214922)

巻号頁・発行日

vol.26, no.3, pp.131-132, 1987-08-19

著者

FUNAKI Kazuo NIDOME Teruhide YAMAFUJI Kaoru

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.21, no.8, pp.1121-1126, 1982-08-20

被引用文献数

29

---

In a nonideal superconducting wire, a number of strange magnetic phenomena have been observed in an AC magnetic field superposed perpendicularly on a DC bias field. When the DC bias field is applied parallel to the wire axis, these strange phenomena are called longitudinal-field effects, while abnonnal transverse-field effects are observed when the DC bias field is perpendicular to the wire axis. In this paper, the conditions for the appearance of the abnormal transverse-field effect are investigated in detail for a superconducting Nb50%Ta ribbon. When the dimension ratios were changed, we observed a change in the magnetic behavior from the longitudinal-field to the abnormal transverse-field effect. It is suggested that such a change originates from a change in the pinning characteristics due to various motional styles of flux lines.

著者

Masafumi Shirai Naoshi Suzuki Kazuko Motizuki

出版者

社団法人応用物理学会

雑誌

JJAP series (ISSN:09149090)

巻号頁・発行日

vol.1, pp.255-257, 1988-05-10

著者

Kim Jin-Soo Kim So-Jung Kim Ho-Gi LEE Duck-Chool UCHINO Kenji

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.38, no.3, pp.1433-1437, 1999-03-15

参考文献数

16

被引用文献数

16

---

High-power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformers. In this study, the piezoelectric and dielectric properties of Fe_2O_3-doped 0.57Pb(Sc_<1/2>Nb_<1/2>)O_3-0.43PbTiO_3 (hereafter 0.57PSN-0.43PT), which is the morphotropic phase boundary composition of the PSN-PT system, were investigated. The maximum dielectric constant (ε_<33>/ε_0=2551) and the minimum dielectric loss (tanδ = 0.51%) at room temperature were obtained at Fe_2O_3 additions of 0.1 wt% and 0.3 wt%, respectively. The temperature dependence of the dielectric constant and the dielectric loss was measured between room temperature and 350℃. With the addition of Fe_2O_3, the piezoelectric constant d_<33> and electromechanical coupling factor k_p were slightly decreased, but the mechanical quality factor Q_m was significantly increased. The highest mechanical quality factor (Q_m = 297) was obtained at 0.3 wt% Fe_2O_3, which is 4.4 times higher than that of nondoped 0.57PSN-0.43PT ceramics. The P-E and S-E loops of the samples at room temperature and at 1.0 Hz were measured at the same time using an automated polarization measuring system.