著者
小畠 厳貴 和田 雄高 徳重 克彦 辻村 学 當間 康 鈴木 作 小寺 章
出版者
一般社団法人 日本機械学会
雑誌
日本機械学会関東支部総会講演会講演論文集
巻号頁・発行日
vol.2008, pp.407-408, 2008

In this paper, polishing performance of ECP-C, which is a kind of ECMP(Electro-Chemical Mechanical Polishing), at Cu clear process is discribed. After Cu clear, it was found that erosion was below 10nm and Cu residue was not observed. However, it was also found that dishing was over 100nm and it significantly increased with over polish time. This increase is assumed of electrochemical ething due to low electrical insulation property of Cu complex formed in ECP-C. Therefore, it is considered that the improvement in electrical insulation property is necessary for applying ECP-C to Cu clear process.

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こんな論文どうですか? 21414 電解複合研磨(ECMP)によるCuクリアプロセスの検討(CMP,OS.1 機械工学が支援する微細加工技術(半導体・MEMS・NE(小畠 厳貴ほか),2008 https://t.co/UcTB1Lu0A6 In …

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