- 著者
-
Kim Yoon
Shim Won
Park Byung-Gook
- 出版者
- Institute of Physics
- 雑誌
- Jpn. J. Appl. Phys. (ISSN:00214922)
- 巻号頁・発行日
- vol.54, no.6, 2015-05-26
- 被引用文献数
-
2
In this paper, we report the fabrication and analysis of the gated twin-bit NAND flash memory with a nitride charge-trapping layer. This device is based on the recessed channel structure, and it has an additional cut-off gate that enables 2-bit operation. Therefore, the density of the array can be doubled without any difficulty in patterning. The fabrication method for gated twin-bit (GTB) silicon–oxide–nitride–oxide–silicon (SONOS) memories and their electrical characteristics are described in this paper. Program/erase characteristics are observed and the 2-bit operation is verified by the forward–reverse reading scheme.