Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy - 文献詳細 - Ceek.jp Altmetrics

1 0 0 0 Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy

著者: K. Shiojima N. Mishina N. Ichikawa M. Kato
出版者: The Japan Society of Applied Physics
雑誌: 2017 International Conference on Solid State Devices and Materials
巻号頁・発行日: 2017-07-28

2017-09-01 12:54:41
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https://confit.atlas.jp/guide/event/ssdm2017/subject/PS-14-01/detail

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SSDM2017 https://t.co/mcHmZ0dmm1　にて福井大塩島研との共同研究の発表があります。SiC基板上の3C-SiCのポリタイプ混在の評価の話。　https://t.co/hcVMocTjKz

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