- 著者
-
前沢 秀憲
中島 伍雄
- 出版者
- 社団法人 日本写真学会
- 雑誌
- 日本写真学会誌 (ISSN:03695662)
- 巻号頁・発行日
- vol.28, no.4, pp.173-178, 1965-01-31 (Released:2011-08-11)
- 参考文献数
- 1
In the previous report we described the fundamental characteristics of selenium photocell which is used for the zero adjust system in the camera with exposure meter. And it was concluded that for the purpose of this, it is desirable for internal series resistance γs to be low and for parallel resistance γp to be high.In this report we have discussed the manufacturing process which decide the value of γs and γp of selenium photocell. The contact surface between the selenium and the base metal, the quality of selenium, the shape of electrode, the sputtering condition of cadmium, etc. wnich influence the resistances of cell were discussed. In general we can settle the values of γs and γp independently: but in some cases there is a certain reciprocity, in which case it is necessary to select the most appropriate condition.