- 著者
-
井浦 聡則
久保田 均
安藤 康夫
宮 照宣
- 出版者
- 公益社団法人日本磁気学会
- 雑誌
- 日本応用磁気学会誌 (ISSN:18804004)
- 巻号頁・発行日
- vol.26, no.6, pp.839-842, 2002-06-01
- 被引用文献数
-
3
The annealing temperature dependence of the tunnel magnetoresistance (TMR) ratio for ferromagnetic tunnel junctions prepared by various oxidation methods was measured. A junction prepared by plasma oxidation showed a TMR ratio of 31.4% before heat treatment, and this ratio increased to 49% after annealing at 300℃ On the other hand, the TMR ratio for a junction prepared by radical oxidation showed a maximum at 350℃. The enhancement of the thermal stability resulted from the different oxidation progress depending on the oxidation method.