著者

倉又 朗人 飯塚 和幸 佐々木 公平 輿 公祥 増井 建和 森島 嘉克 後藤 健 熊谷 義直 村上 尚 纐纈 明伯 ワン マンホイ 上村 崇史 東脇 正高 山腰 茂伸

出版者

日本結晶成長学会

雑誌

日本結晶成長学会誌 (ISSN:03856275)

巻号頁・発行日

vol.42, no.2, pp.130-140, 2015 (Released:2017-05-31)

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Gallium Oxide is attracting attention as a new material for optical and electrical applications. It has a large band gap of 4.8 eV. The electron concentration can be controlled in a range between 10^<16> cm^<-3> and 10^<19> cm^<-3>. Large-size bulk crystals can be obtained easily because melt growth is possible under the atmospheric pressure. From these material features, we expect high performance and low production cost of LEDs and high power devices. In this report, we introduce the properties of β-Ga_2O_3 single crystal substrates and the present status of device development.