著者

八木 宏文 石川 智広 油谷 直毅 木股 雅章 布下 正宏 瀬戸 俊樹 亀井 幹雄

出版者

一般社団法人 映像情報メディア学会

雑誌

映像情報メディア学会技術報告 (ISSN:03864227)

巻号頁・発行日

vol.18, no.17, pp.33-38, 1994

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An improved 512x512-element PtSi Schottky-barrier infrared image sensor (512x512 IRCSD) has been developed by using the charge sweep device (CSD) readout architecture and 1.2 μm minimum design rules. A large fill factor of 71% is achieved in spite of a small pixel size of 26μm x 20μm. At the Schottky-barrier detector reset voltage of 4V, the differential temperature response with f/1.2 optics at 300K and saturation signal level were 3.2x10^4 electrons/K and 2.9xl0^6 electrons, respectively. The NETD was estimated as 0.033K with f/1.2 optics at 300K. This 512x512 IRCSD was designed to be operated in either the field or frame integration interlace modes for versatility.