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1 0 0 0 Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

著者
ASUBAR JOEL
出版者
福井大学
雑誌
基盤研究(C)
巻号頁・発行日
2023-04-01

1 0 0 0 OA Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method

著者
Yatabe Zenji Muramatsu Toru Asubar Joel T. Kasai Seiya
出版者
Elsevier
雑誌
Physics Letters A (ISSN:03759601)
巻号頁・発行日
vol.379, no.7, pp.738-742, 2015-03-20
被引用文献数
3
A novel method is presented for obtaining the distribution function of relaxation times G(tau) from power spectrum 1/f(alpha) (1 <= alpha <= 2). It is derived using McWhorter model and its inverse Stieltjes transform. Unlike the pre-assumed conventional g(tau) distribution, the extracted G(tau) has a peak whose width increases as the slope of the power spectrum alpha decreases. The peak position determines the dominant time constant of the system. Our method is unique because the distribution function is directly extracted from the measured power spectrum. We then demonstrate the validity of this method in the analysis of noise in transistor.