- 著者
- Takuya Hoshi Norihide Kashio Yuta Shiratori Kenji Kurishima Minoru Ida Hideaki Matsuzaki
- 出版者
- The Institute of Electronics, Information and Communication Engineers
- 雑誌
- IEICE Electronics Express (ISSN:13492543)
- 巻号頁・発行日
- vol.16, no.3, pp.20181125, 2019 (Released:2019-02-10)
- 参考文献数
- 12
- 被引用文献数
- 2 6
This letter presents the current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) consisting of an n-InGaP emitter, a p-GaAsSb/p-InGaAsSb base, and an n-InP collector. The impact of the thickness of the first base metal (Pt) on the base contact resistivity is investigated in a p-GaAsSb/p-InGaAsSb test structure for the purpose of improving fmax. A low base contact resistivity (4.8 Ωµm2) is obtained when the Pt layer is thinner than the p-GaAsSb layer. A fabricated InGaP/GaAsSb/InGaAsSb DHBT with a 0.25-µm emitter exhibits a high current gain of 33 even though the base sheet resistance is as low as 1025 Ω/sq. The DHBT also exhibits an fmax of 703 GHz and a breakdown voltage of 5.4 V. These results demonstrate that this DHBT technology is useful for fabricating high-speed integrated circuits with high output voltages.