- 著者
- Hsin-Chieh Lin Kuan-Chou Chen Hwann-Kaeo Chiou
- 出版者
- The Institute of Electronics, Information and Communication Engineers
- 雑誌
- IEICE Electronics Express (ISSN:13492543)
- 巻号頁・発行日
- vol.20, no.8, pp.20230068, 2023-04-25 (Released:2023-04-25)
- 参考文献数
- 30
This letter presents an integrated 5G NR n79-band power amplifier with high power and efficiency that was fabricated using WIN Semiconductors’ 0.25-μm GaN/SiC technology. The stability and linearity issues of the PA is thoroughly considered. High efficiency and broadband operation were achieved using a continuous Class-F mode output matching network. This two-stage PA had a power gain, 3-dB power bandwidth, saturation power, and peak power-added efficiency of 20.4dB, 3.6-5.4GHz, 39.1dBm, and 50.9%, respectively. Its average output power was 33.3dBm under an error vector magnitude requirement of 3.5% for a 5G NR FR1 256-QAM 100-MHz-bandwidth modulated signal with a frequency of 3.7-5.0GHz.