- 著者
- Ito Hiroshi Maeda Tetsuhiko Nakano Akihiro Hwang Chul Min Ishida Masayoshi Kato Atsushi Yoshida Tetsuya
- 出版者
- Elsevier Ltd.
- 雑誌
- International journal of hydrogen energy (ISSN:03603199)
- 巻号頁・発行日
- vol.37, no.9, pp.7418-7428, 2012-05
- 被引用文献数
- 132 11
Experimentalstudy on proton exchange membrane (PEM) electrolyzer was carried out focusing on the effect of pore structural properties of currentcollectors, such as porosity and pore diameter. Various titanium (Ti)-felt substrates with different porosities and pore diameters (measured by capillary flow porometry) were used as the anode currentcollector. Results show that when the mean pore diameter of the currentcollector was larger than 10 μm, the electrolysis performance improved with decreasing pore diameter. In contrast, changes in porosity had no significant effect on the cell performance when the porosity exceeded 0.50. The flow pattern of two-phase flow in the flow channel was discussed in terms of its relationship to bubble size and to pore diameter of the currentcollector. Finally, correlation between the calculated membrane resistance and the measured pore diameter of the currentcollectors suggest that larger bubbles generated from larger pores tend to become long bubbles in the channel, thus hindering the water supply to the membrane.
- 著者
- Tanaka Hisaaki Watanabe Shun-ichiro Ito Hiroshi Marumoto Kazuhiro Kuroda Shin-ichi
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.94, no.10, pp.103308, 2009-03
- 被引用文献数
- 33 17
Charge carrier concentration in operating field-effect transistor (FET) of regioregular poly(3-hexylthiophene) has been directly determined by electron spin resonance (ESR). ESR signals of field-induced polarons are observed around g=2.003 under the application of negative gate-source voltage (Vgs). Upon applying drain-source voltage (Vds), ESR intensity decreases linearly in the low Vds region, reaching to about 50% of the initial intensity at the pinch-off point (Vds~=Vgs). For larger absolute values of Vds, it becomes nearly Vds independent. These behaviors are well explained by the change in the carrier concentration obtained by the FET theory using gradual channel approximation.