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2 0 0 0 Analysis and Design of a Linear Ka-Band Power Amplifier in 65-nm CMOS for 5G Applications

著者
Chongyu YU Jun FENG
出版者
The Institute of Electronics, Information and Communication Engineers
雑誌
IEICE TRANSACTIONS on Electronics (ISSN:09168516)
巻号頁・発行日
vol.E105-C, no.5, pp.184-193, 2022-05-01
A linear and broadband power amplifier (PA) for 5G phased-array is presented. The design improves the linearity by operating the transistors in deep class AB region. The design broadens the bandwidth by applying the inter-stage weakly-coupled transformer. The theory of transformers is illustrated by analyzing the odd- and even-mode model. Based on this, the odd-mode Q factor is used to evaluate the quality of impedance matching. Weakly- and strongly-coupled transformers are compared and analyzed in both the design process and applicable characteristics. Besides, a well-founded method to achieve the transformer-based balanced-unbalanced transformation is proposed. The fully integrated two-stage PA is designed and implemented in a 65-nm CMOS process with a 1-V power supply to provide a maximum small-signal gain of 19dB. The maximum output 1-dB compressed power (P1dB) of 17.4dBm and the saturated output power (PSAT) of 18dBm are measured at 28GHz. The power-added efficiency (PAE) of the P1dB is 26.5%. From 23 to 32GHz, the measured P1dB is above 16dBm, covering the potential 5G bands worldwide around 28GHz.

2 0 0 0 OA A 8MB PERPENDICULAR MAGNETIC RECORDING FLOPPY DISK DRIVE

著者
Sheng-bin HU Jiang-ling ZHANG Xiang-jun FENG Ya-xi GONG
出版者
(社)日本応用磁気学会
雑誌
日本応用磁気学会誌 (ISSN:02850192)
巻号頁・発行日
vol.15, no.S_2_PMRC_91, pp.S2_857-861, 1991 (Released:2011-12-15)
参考文献数
3
Based on the 4MB 3.5" Perpendicular Recording/Longitudinal Recording Floppy Disk Drive with a track density of 270 TPI, we further developed a 3.5" Perpendicular Recording Floppy Disk Drive demonstrating the potential to realize a capacity of more than 8MB capacity. The key technology included: (1) a Perpendicular Recording/Longitudinal Recording Floppy Head which was without erase element and helped realize the capacity of 4MB-8MB under the condition of without using servo system for tracking. (2) The GAL Technology to expand the Application-Specific Integrated Circuits. (3) The improvements of the read write channel.