- 著者
- Akihiro Uehara Keiichiro Kagawa Takashi Tokuda Jun Ohta Masahiro Nunoshita
- 出版者
- The Institute of Electronics, Information and Communication Engineers
- 雑誌
- IEICE Electronics Express (ISSN:13492543)
- 巻号頁・発行日
- vol.1, no.18, pp.556-561, 2004 (Released:2004-12-25)
- 参考文献数
- 8
A high-sensitive CMOS photosensor based on a pulse frequency modulation (PFM) scheme is presented. We propose and demonstrate the high-sensitive PFM photosensor, whose output frequency is proportionate to the incident light intensity, that utilizes MOS interface-trap charge pumping (ITCP) as a frequency-controlled ultra-low current. The proposed pixel sensor consists of only 4 transistors: a transistor as an ultra-low current source; a sense amplifier transistor; a selection transistor; and, a reset transistor. The prototype device is fabricated using 0.6-µm standard CMOS technology. High sensitivity 4.0 × 105Hz/(W·m-2), which is larger than two orders of magnitude compared to previous works, was obtained.