- 著者
- Fukata N. Mitome M. Bando Y. Seoka M. Matsushita S. Murakami K. Chen J. Sekiguchi T.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.93, no.20, pp.203106, 2008-11
- 被引用文献数
- 33 20
Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.
- 著者
- Fukata N. Chen J. Sekiguchi T. Matsushita S. Oshima T. Uchida N. Murakami K. Tsurui T. Ito S.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.90, no.15, pp.153117, 2007-04
- 被引用文献数
- 40 32
Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P Kalpha line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.