著者
Fukata N. Mitome M. Bando Y. Seoka M. Matsushita S. Murakami K. Chen J. Sekiguchi T.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.93, no.20, pp.203106, 2008-11
被引用文献数
33 20

Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

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