著者

OHMI Tadahiro

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.33, no.12, pp.6747-6755, 1994-12-30

被引用文献数

11 21

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In addition to three-terminal devices such as metal oxide semiconductor (MOS) transistors and bipolar transistors, the introduction of four-terminal devices such as neuron MOS transistor is essentially required for the realization of intelligent ULSI systems which is most crucial for electronics in the 21st century. Four-terminal devices will allow us to make ULSI hardware more flexible, real-time programmable, and thus more intelligent based on bi-nary multi-valued analog-merged hardware computation algorithm. For such systems to work, we must establish high-accuracy device fabrication processes based on the concept of ultraclean technology. The simultaneous fulfillment of three principles, viz. ultraclean wafer surface, ultraclean processing environment, and perfect process-parameter control, is the key to high-performance processes for fabricating advanced subhalf-micron and sub-quarter-micron ULSI devices. Advanced process technologies have been realized for the first time by ultraclean processing, making it possible to establish total low-temperature processing, such as gate oxidation at 45O℃, implanted region anneal at 45O℃, BPSG film reflow at 45O℃ and single-crystal silicon epitaxy with simultaneous doping at 3OO℃ by introducing very well regulated ion bombardment during processing which is most essential for obtaining high-performance subhalf-micron and subquarter-micron ULSI.