- 著者
- Xu Maojie Okada Arifumi Yoshida Shoji Shigekawa Hidemi
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.94, no.7, pp.073109, 2009
- 被引用文献数
- 5 7
Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-31×31 surface at room temperature (RT) deposition. On a Si(111)-In-4×1/31×31 coexisting surface, nanowires were selectively grown in the Si(111)-In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy.