著者

Xu Maojie Okada Arifumi Yoshida Shoji Shigekawa Hidemi

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.94, no.7, pp.073109, 2009

被引用文献数

5 7

---

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-31×31 surface at room temperature (RT) deposition. On a Si(111)-In-4×1/31×31 coexisting surface, nanowires were selectively grown in the Si(111)-In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy.