著者
Xu Maojie Okada Arifumi Yoshida Shoji Shigekawa Hidemi
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.94, no.7, pp.073109, 2009
被引用文献数
5 7

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-31×31 surface at room temperature (RT) deposition. On a Si(111)-In-4×1/31×31 coexisting surface, nanowires were selectively grown in the Si(111)-In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy.

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