- 著者
-
SASAKI Hitoshi
IKARI Atsushi
TERASHIMA Kazutaka
KIMURA Shigeyuki
- 出版者
- 社団法人応用物理学会
- 雑誌
- Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)
- 巻号頁・発行日
- vol.34, no.7, pp.3426-3431, 1995-07-15
- 被引用文献数
-
6
55
63
The temperature dependence of the electrical resistivity of molten silicon was measured based on the direct-current four-probe method in the temperature range from the melting point (1,415℃) to 1,630℃. The variation of the resistivity in this temperature region was less than 0.7%, which is much smaller than previously reported values. The measured resistivity near the solodification point was about 72×10^<-6>Ωcm, which is about 8% smaller than previously reported values. The resistivity of molten silicon showed a local minimum in the range from 1,450℃ to 1,500℃. The resistivity of molten silicon was calculated based on Ziman's formula. The temperature dependence of the measured resistivity was not reproduced when the structure factor S (Q) calculated by a simple hard-sphere model was substituted into Ziman's formula, but was reproduced by using the experimental data of S (Q) measured by Waseda which shows the first peak of asymmetric shape. This result suggests that the specific melt structure of molten silicon has a significant effect on the resistivity.