- 著者
- Junichiro Nagao Urmimala Chatterjee Xiangdong Li Jun Furuta Stefaan Decoutere Kazutoshi Kobayashi
- 出版者
- The Institute of Electronics, Information and Communication Engineers
- 雑誌
- IEICE Electronics Express (ISSN:13492543)
- 巻号頁・発行日
- vol.18, no.6, pp.20210059, 2021-03-25 (Released:2021-03-25)
- 参考文献数
- 32
- 被引用文献数
- 1
A three-level gate driver and a power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) were monolithically integrated to prevent false turn-on, reduce reverse conduction loss and realize fast switching. The proposed gate driver works with an external and an integrated capacitor which supply negative gate voltage. Monolithic integration makes power conversion circuits smaller in size and improves circuit performance due to its lower parasitics. The integrated MIM (Metal-Insulator-Metal) capacitor improves dv/dt immunity. Measurement results showed that the proposed GaN-IC realized fast switching speed of 3.7ns ton and 6.1ns toff, and improved efficiency of an SR buck-converter.