著者

Mali Gao Xiaowu Cai Weiwei Yan Haitao Zhao Ruirui Xia Yuexin Gao

出版者

The Institute of Electronics, Information and Communication Engineers

雑誌

IEICE Electronics Express (ISSN:13492543)

巻号頁・発行日

vol.20, no.7, pp.20230008, 2023-04-10 (Released:2023-04-10)

参考文献数

32

被引用文献数

3

---

A high voltage, external capacitor-less low-dropout regulator (HVLDO) with transient enhancement loop is presented in this work. The proposed HVLDO is designed with high withstand voltage laterally-diffused MOS (LDMOS) transistors and a transient enhancement loop is proposed to properly inject/sink current to/from the gate and output nodes of the power transistors to achieve fast transient response and high stability. Fabricated in 0.5µm SOI BCD process, the HVLDO occupies an active area of 0.29mm2. Operating with an input voltage ranging from 5.2 to 20V, it supplies an output voltage of 5V and a maximum load of 100mA. For all load conditions, this design has the power supply rejection of -49dB@100kHz, the phase margin over 68.4deg and achieves a temperature coefficient of 13.15ppm/°C. Measurement results show that this design has a line regulation of 0.88mV/V and a load regulation of 0.22mV/mA. The proposed HVLDO features fast line transient response of 60/20mV@9.8V/µs, fast load transient response of 30/70mV@100mA/µs, and recovery time of 2µs without external capacitors. Compared with the prior art, this work achieves the best transient FOM of 12.19fs.