著者

Baba M. Toh K. Toko K. Hara K.O. Usami N. Saito N. Yoshizawa N. Suemasu T.

出版者

Elsevier B.V.

雑誌

Journal of crystal growth (ISSN:00220248)

巻号頁・発行日

vol.378, pp.193-197, 2013-09

被引用文献数

5 1

---

BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.