著者
原田 翔平 大村 一郎 附田 正則
出版者
社団法人電気学会
雑誌
電気学会研究会資料. EDD, 電子デバイス研究会
巻号頁・発行日
vol.EDD-15, pp.EDD-15-085, 2015-10

Double gate IGBT is proposed and confirmed significant reduction of turn-off loss with TCAD simulation. Conventional IGBTs have a problem of large turn-off loss with stored carrier in N-base. The proposed structure declines carrier injection during turn-off by dynamic hole injection decrease with the collector side gate control.