著者

原田 翔平 大村 一郎 附田 正則

出版者

社団法人電気学会

雑誌

電気学会研究会資料. EDD, 電子デバイス研究会

巻号頁・発行日

vol.EDD-15, pp.EDD-15-085, 2015-10

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Double gate IGBT is proposed and confirmed significant reduction of turn-off loss with TCAD simulation. Conventional IGBTs have a problem of large turn-off loss with stored carrier in N-base. The proposed structure declines carrier injection during turn-off by dynamic hole injection decrease with the collector side gate control.