- 著者
- Tsujimoto M. Kambara H. Maeda Y. Yoshioka Y. Nakagawa Y. Kakeya I.
- 出版者
- American Physical Society
- 雑誌
- Physical Review Applied (ISSN:23317019)
- 巻号頁・発行日
- vol.2, no.4, 2014-10-29
- 被引用文献数
- 46
高温超伝導体を用いた新しいテラヘルツ光源における温度分布の可視化と制御に成功 -小型コヒーレントテラヘルツ光源の実現につながる重要な手がかり-. 京都大学プレスリリース. 2014-10-22.
- 著者
- Souma S. Sawada A. Chen H. Sekine Y. Eto M. Koga T.
- 出版者
- American Physical Society
- 雑誌
- Physical review applied (ISSN:23317019)
- 巻号頁・発行日
- vol.4, no.3, pp.34010, 2015-09-29
- 被引用文献数
- 15
We propose a lateral spin-blockade device that uses the interband Rashba effect in a symmetric double quantum well (QW), where the Rashba effect in the conventional sense vanishes because of its inversion symmetry. The interband Rashba effect manifests itself in the off-diagonal term (represented by the parameter eta) in the QW space using the bonding and antibonding basis [Esmerindo Bernardes, John Schliemann, Minchul Lee, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. 99, 076603 (2007)]. In such a system, spin selection is possible by tuning the device length, gate electric field and in-plane magnetic field. We particularly show illustrative mechanisms using a one-dimensional model with k = (k(F), 0), where the selected spin can be blocked completely in the presence of the in-plane magnetic field. While the inclusion of the finite k(y) and/or the gate electric field deteriorates the spin polarization P, finite values remain for P (P>11%). Our proposal can also be regarded as an effective way of enhancing a variation of the Rashba-Edelstein effect, the generation of bulk spin polarization by electric current, based on semiconductor band engineering technology.