著者

Viet-Ha Tran Takeshi Yatabe Takahiro Matsumoto Hidetaka Nakai Kazuharu Suzuki Takao Enomoto Seiji Ogo

出版者

(社)日本化学会

雑誌

Chemistry Letters (ISSN:03667022)

巻号頁・発行日

vol.44, no.6, pp.794-796, 2015-06-05 (Released:2015-06-05)

参考文献数

37

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We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.