著者

下田 義雄 佐藤 秀隆

出版者

The Institute of Electrical Engineers of Japan

雑誌

電気学会論文誌C(電子・情報・システム部門誌) (ISSN:03854221)

巻号頁・発行日

vol.119, no.8-9, pp.1004-1009, 1999-08-01 (Released:2008-12-19)

参考文献数

12

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Reverse conducting thyristors are analyzed using a two-dimensional simulator to investigate the effects of substrate types, P-type or N-type, on transient characteristics. The ramp currents with four kinds of rise-time are applied to the thyristors. The thyristor with a P-type substrate shows faster turn-on time and lower clamping-voltage change than that of an N-substrate for the applied ramp currents. The excellent transient response to the P-type substrate thyristor is caused by the accelerated carrier, which results from the high electric field appearing in the P-base region.