- 著者
-
下田 義雄
佐藤 秀隆
- 出版者
- The Institute of Electrical Engineers of Japan
- 雑誌
- 電気学会論文誌C(電子・情報・システム部門誌) (ISSN:03854221)
- 巻号頁・発行日
- vol.119, no.8-9, pp.1004-1009, 1999-08-01 (Released:2008-12-19)
- 参考文献数
- 12
Reverse conducting thyristors are analyzed using a two-dimensional simulator to investigate the effects of substrate types, P-type or N-type, on transient characteristics. The ramp currents with four kinds of rise-time are applied to the thyristors. The thyristor with a P-type substrate shows faster turn-on time and lower clamping-voltage change than that of an N-substrate for the applied ramp currents. The excellent transient response to the P-type substrate thyristor is caused by the accelerated carrier, which results from the high electric field appearing in the P-base region.