著者

Yoh Kanji Taniguchi Hiroaki Kiyomi Kazumasa Inoue Masataka

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.30, no.12, pp.3833-3836, 1991

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We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/InAs/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/GaSb/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 &mu;m-gate-length GaSb p-channel HFET and 1.2 &mu;m-gate-length InAs n-channel HFETs showed decent <I>I</I>-<I>V</I> characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.