著者

Yoh Kanji Taniguchi Hiroaki Kiyomi Kazumasa Inoue Masataka

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.30, no.12, pp.3833-3836, 1991

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We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/InAs/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/GaSb/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 &mu;m-gate-length GaSb p-channel HFET and 1.2 &mu;m-gate-length InAs n-channel HFETs showed decent <I>I</I>-<I>V</I> characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.

著者

Fujimoto Akihiro Okada Yukinori Boroevich Keith A Tsunoda Tatsuhiko Taniguchi Hiroaki Nakagawa Hidewaki

出版者

Nature Publishing Group

雑誌

Scientific reports (ISSN:20452322)

巻号頁・発行日

vol.6, 2016-05-26

被引用文献数

19

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タンパク質の立体構造上の変異解析により治療標的となり得るがん遺伝子を検出. 京都大学プレスリリース. 2016-06-01.