著者

WANG Y. H. YARN K. F. CHANG C. Y.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.2, pp.L243-L246, 1990-02-20

被引用文献数

1

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We demonstrate a new GaAs regenerative switching device with a double triangular barrier (DTB) structure, i. e., p^+-i-δ(n^+)-i-δ(p^+)-i-n^+, prepared by molecular beam epitaxy (MBE). Using the concept of sequential collapse of the internal barriers, two distinctive switching regions are established. First, a negative resistance region (S-type) is observed, followed by a positive resistance region (inverted N-shape) in between the switching behavior with the increase of applied bias. This device may have applicability for tristate logic circuits.