著者

MAGANE Mitsuo ITABASHI Naoshi NISHIWAKI Nobuki GOTO Toshio YAMADA Chikashi HIROTA Eizi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.5, pp.L829-L832, 1990-05-20

被引用文献数

2 31

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Infrared diode laser absorption spectroscopy (IRLAS) was established as the measurement method for the CF radical density. The absolute density of the CF radical and its pressure dependences were measured in DC pulsed CF_4/H_2 discharge plasma. Moreover, from the analysis of the decay parts of the observed transient absorption waveforms of the CF radical, the CF radical was shown to be removed mainly by a diffusion process in the present plasma, yielding the diffusion coefficients D(CF in H_2) and D(CF in CF_4).

著者

Ono Yukinori Zimmerman Neil M. Yamazaki Kenji Takahashi Yasuo

出版者

Japan Society of Applied Physics

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.42, no.10, pp.L1109-L1111, 2003-10-01

参考文献数

19

被引用文献数

7 23

---

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency $f$ of ${\sim}1$ MHz and a phase shift of $\pi$, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

著者

Araki Hisashi * Anvar Saiki Eiji Yamasaki Nobuo Yakushi Kyuya Yoshino Katsumi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.34, no.8, pp.L1041-L1044, 1995-08-15

参考文献数

22

被引用文献数

16

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Superconductivity in poly(3-alkylthiophene)- C60 composite (PAT- C60) is found upon doping by potassium from vapor phase. The superconducting (SC) transition at T C=17 K is detected by superconducting quantum interference device (SQUID), which showed 0.8% of SC fraction for C60 content of 5 mol%. An exceptionally strong low-field microwave absorption (LFMA) implies the existence of granular SC phase. A rather small hysteresis of LFMA indicates the important role of the Josephson weak link network, probably formed between SC K xC60 clusters separated by conductive K xPAT barriers. ESR of PAT(C60) yK x composite shows two types of lines: one from negative polarons P- in PAT chains, and another assigned to K xC60 clusters and C1-60 radical.

著者

Usui Akira Sunakawa Haruo Sakai Akira YAMAGUCHI A. Atsushi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.36, no.7, pp.L899-L902, 1997-07-15

被引用文献数

113 792

---

Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO_2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO_2 mask. As a result, GaN layers with a dislocation density as low as 6 × 10^7 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.

著者

MIURA Noboru KAWANISHI Mitsuhiro MATSUMOTO Hironaga NAKANO Ryotaro

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.11, pp.L1291-L1292, 1999-11-15

被引用文献数

63 94

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The high-luminance blue emitting electroluminescent (EL) devices which have been satisfied with the requirement for full color displays were obtained. BaAl_2S_4:Eu thin-film EL devices as the new blue emitting EL phosphor was prepared by the two targets pulse-electron-beam evaporation. The maximum luminance level was 65 cd/m^2 under the 50 Hz-pulse voltage. The EL spectrum had a blue emission band with a peak around 475 nm due to the 5d-4f transition for Eu^<2+> ion. The Commission Internationale de l'Eclairage (CIE) color coordinates of BaAl_2S_4:Eu EL device were x=0.12 and y=0.10.

著者

YANG L. W. WRIGHT P. D. SHEN H. LU Y. BRUSENBACK P. R. KO S. K. CALDERON L. HARTZLER W. D. HAN W. Y. DUTTA M. CHANG W. H.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.32, no.10, pp.L1400-L1402, 1993-10-01

被引用文献数

1

---

Submicron heterojunction bipolar transistors (HBTs) with maximum frequency of oscillation, f_<MAX>, of 91 GHz have been fabricated using a self-aligned technique and a very heavily carbon-doped (10^<20> cm^<-3>) base layer. Since the quenching of photoluminescence (PL) intensity in heavily-doped Cabs is mainly due to nonradiative recombination in the bulk material, while contribution from surface recombination is negligible, the use of a heavily carbon-doped base layer in AlGaAs/GaAs HBTs minimizes the influence of surface recombination in the extrinsic base region. Thus, for HBTs with a heavily doped base layer, the "emitter size effect" (degradation of HBT current gain) is greatly reduced when the emitter width is scaled down to submicron (0.6 μm) dimensions.

著者

Yamamoto Tetsuya Katayama-Yoshida Hiroshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.2, pp.L166-L169, 1999-02-15

被引用文献数

28 523

---

We have investigated the electronic structures of n- or p-type doped ZnO based on ab initio electronic band structure calculations. We find unipolarity in ZnO; n-type doping using Al, Ga or In species decreases the Madelung energy while p-type doping using N species increases the Madelung energy, in addition to causing substantial localization of the N states. Codoping using reactive codopants, Al, Ga or In, enhances the incorporation of N acceptors in p-type codoped ZnO. We find the delocalized states of N for p-type ZnO codoped with N and Al (Ga).

著者

Xiao Deng M. Liu Hong L. Qin Ling

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.8, pp.L875-L877, 1999-08-01

被引用文献数

2

---

The Townsend first ionization coefficient α, electron attachment coefficient η and effective ionization coefficient α^^- (=α-η) in SF_6 and xenon gas mixtures were measured by the steady-state Townsend method for 22.6 &les; E/p &les; 94 V・mm^<-1>kPa^<-1> and mixture ratios of 10:90, 25:75, 50:50, 75:25 and 90:10. The limiting E/p in SF_6-Xe, (E/p)_<lim>, which represents E/p for α/P=n/P, was derived from the pre-breakdown current growth measurements, which varies approximately linearly with SF_6 concentration in the SF_6-Xe gas mixtures.

著者

Miyazaki Yuzuru Kudo Kazutaka Akoshima Megumi ONO Yasuhiro KOIKE Yoji KAJITANI Tsuyoshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.39, no.6, pp.L531-L533, 2000-06-01

被引用文献数

27 248

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Electric resistivity, thermoelectric power and thermal conductivity of a polycrystalline sample of the composite crystal[Ca_2CoO_<3.34>]_<0.614>[CoO_2], also known as Ca_3Co_4O_9, have been measured below 300K. Metallic conductivity accompanied by large thermoelectric power has been observed down to 50K. At 300K, the sample exhibits a thermoelectric power of S = 133μV・K^<-1> resistivity of ρ = 15mΩ・cm and thermal conductivity of κ = 9.8mW・K^<-1>・cm^<-1>. The resulting dimensionless figure of merit becomes ZT_<300>=3.5×10^<-2> which is comparable to the value reported for a polycrystalline sample of NaCo_2O_4, indicating that the title compound is a potential candidate for a thermoelectric material.

著者

HOSODA Masahiro WADA Tatsuo GARITO Anthony F. SASABE Hiroyuki

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.31, no.3, pp.L249-L251, 1992-03-01

被引用文献数

8

---

The third-order optical susceptibilities |x^<(3)>_<1111>(-3ω;ω,ω,ω)| for spin-coated films of free-base (H_2) and MnCl-octaethyl[18]porphyrins, and N,N',N",N&tprime;-tetramethyl-octaethyl[26]porphyrin-bistrifluoroacetate are determined by optical third-harmonic generation measurements at a wavelength of 1907 nm. The |x^<(3)>| values are 1.9 x 10^<-12>,2.6 x 10^<-12>, and 1.0 x 10^<-11> esu for H_2-[18]porphyrin, MnCl-[18]porphyrin, and [26]porphyrin, respectively. The enhancement of third-order nonlinear properties in macrocyclic compounds is discussed in terms of an extended π-electron system.

著者

AMANO Hiroshi KITO Masahiro HIRAMATSU Kazumasa AKASAKI Isamu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.28, no.12, pp.L2112-L2114, 1989-12-20

被引用文献数

103 1589

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Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is 〜2・10^<16>cm^<-3>, the hole mobility is 〜8 cm^2/ V・s and the resistivity is 〜35 Ω・cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.

著者

WANG Y. H. YARN K. F. CHANG C. Y.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.2, pp.L243-L246, 1990-02-20

被引用文献数

1

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We demonstrate a new GaAs regenerative switching device with a double triangular barrier (DTB) structure, i. e., p^+-i-δ(n^+)-i-δ(p^+)-i-n^+, prepared by molecular beam epitaxy (MBE). Using the concept of sequential collapse of the internal barriers, two distinctive switching regions are established. First, a negative resistance region (S-type) is observed, followed by a positive resistance region (inverted N-shape) in between the switching behavior with the increase of applied bias. This device may have applicability for tristate logic circuits.