著者

AMANO Hiroshi KITO Masahiro HIRAMATSU Kazumasa AKASAKI Isamu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.28, no.12, pp.L2112-L2114, 1989-12-20

被引用文献数

103 1589

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Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is 〜2・10^<16>cm^<-3>, the hole mobility is 〜8 cm^2/ V・s and the resistivity is 〜35 Ω・cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.