著者

坂田 博 宮本 宏彰 杉本 健二 菊池 和彦 磯村 滋宏 正田 英介

出版者

The Institute of Electrical Engineers of Japan

雑誌

電気学会論文誌D(産業応用部門誌) (ISSN:09136339)

巻号頁・発行日

vol.113, no.6, pp.728-734, 1993

被引用文献数

1

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Recent development in power electronics has made power semiconductor device larger and complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor device, potential distribution and carrier concentrations can be solved using the finite element method. In this study, we make formulation for one dimensional analysis of a gate turn off thyristor (GTO) and simulate switching characteristics in order to know the effects of snubber circuit. In conclusion snubber condensor is necessary to suppress spike voltage, but increases the turn off loss of GTO.