著者
坂田 博 宮本 宏彰 杉本 健二 菊池 和彦 磯村 滋宏 正田 英介
出版者
The Institute of Electrical Engineers of Japan
雑誌
電気学会論文誌D(産業応用部門誌) (ISSN:09136339)
巻号頁・発行日
vol.113, no.6, pp.728-734, 1993
被引用文献数
1

Recent development in power electronics has made power semiconductor device larger and complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor device, potential distribution and carrier concentrations can be solved using the finite element method. In this study, we make formulation for one dimensional analysis of a gate turn off thyristor (GTO) and simulate switching characteristics in order to know the effects of snubber circuit. In conclusion snubber condensor is necessary to suppress spike voltage, but increases the turn off loss of GTO.

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こんな論文どうですか? 有限要素法によるスナバ回路を含むGTOのスイッチング特性解析(坂田 博ほか),1993 http://t.co/Owehwxfx

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