著者

Zawawi Ruhaifi Abdullah Sidek Othman

出版者

The Institute of Electronics, Information and Communication Engineers

雑誌

IEICE Electronics Express (ISSN:13492543)

巻号頁・発行日

vol.9, no.4, pp.240-244, 2012

被引用文献数

10

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The current paper presents an improved bandgap voltage reference (BGR) that utilizes curvature-corrected current generators which compensate for the voltage reference at lower and higher temperature range. The voltage reference is operated with a supply voltage of 2.5V to achieve an output reference of 1.1835V. The temperature coefficient achieved from the circuit is 1.342ppm/°C, resulting from temperature changes between -50°C to 125°C, sixfold improvement from first-order BGR. The proposed circuit is simulated using Silterra 0.13µm CMOS technology.