著者

Sekiguchi Atsushi Isono Mariko Matsuzawa Toshiharu

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.38, no.8, pp.4936-4941, 1999

被引用文献数

8

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By incorporating baking equipment into a Fourier transform infrared (FT-IR) spectrometer, a deprotection reaction parameter measurement system that can be used with chemically amplified resists has been developed. This system allows us to study new models for chemically amplified (CA) resists by including into a conventional deprotection reaction model an initial delay effect and a quencher effect. This model is also used to measure deprotection reaction parameters. The parameters thus obtained are inputted into a lithography simulator PROLITH/2 to perform profile simulations. The results are compared with those of scanning electron microscope (SEM) observations. Although the simulation results and SEM observations are not in complete agreement, the general trends observed are in adequate agreement. These results confirm the applicability of the proposed model to CA resists for ArF excimer laser lithography and verify the usefulness of the measurement system.