著者

時任 静士 熊木 大介

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.28, no.5, pp.242-248, 2007-05-10 (Released:2007-06-03)

参考文献数

18

被引用文献数

1 1

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Insulator-semiconductor and electrode-semiconductor interfaces are crucial to the performance of organic thin-film transistors (TFTs). This paper reviews how to control the interfaces for improving the performance of p-type and n-type organic TFTs and p-type polymer TFTs. In particular, modifying the gate insulator surface by using self-assembled monolayers (SAMs) is our main focus. Changes in the water contact angle and surface energy by forming SAMs on the gate insulator surface are shown, and the TFT performance in the organic semiconductor layers grown on the modified surfaces is presented. Crystal growth of the organic semiconductors and charge trap sites on the gate insulator surface are discussed. They explain the improved TFT performance such as field effect mobility and current on/off ratio.