1 0 0 0 OA Hard x-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
- 著者
- Baba Masakazu Ito Keita Du Weijie Sanai Tatsunori Okamoto Kazuaki Toko Kaoru Ueda Shigenori Imai Yoji Kimura Akio Suemasu Takashi
- 出版者
- American Institute of Physics
- 雑誌
- Journal of applied physics (ISSN:00218979)
- 巻号頁・発行日
- vol.114, no.12, pp.123702, 2013-09
- 被引用文献数
- 15
The valence band structures of a 35-nm-thick BaSi2 epitaxial film on Si(111) have been explored at room temperature by hard x-ray photoelectron spectroscopy (HAXPES). The experimentally obtained photoelectron spectrum is well reproduced by first-principles calculations based on the pseudopotential method. The top of the valence band consists mainly of Si 3s and 3p states in BaSi2, suggesting that the effective mass of holes is small in BaSi2. This is favorable from the viewpoint of solar cell applications. The observed spectrum shifted slightly to the lower energy side due to n-type conductivity of BaSi2. The valence band top was observed at about 0.8 eV below the Fermi level in the HAXPES spectrum.
- 著者
- Khan M. Ajmal Hara Kosuke O. Nakamura Kotaro Du Weijie Baba Masakazu Toh Katsuaki Suzuno Mitsushi Toko Kaoru Usami Noritaka Suemasu Takashi
- 出版者
- Elsevier B.V.
- 雑誌
- Journal of crystal growth (ISSN:00220248)
- 巻号頁・発行日
- vol.378, pp.201-204, 2013-09
- 被引用文献数
- 18 1
We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23 meV.