- 著者
- Khan M. Ajmal Hara Kosuke O. Nakamura Kotaro Du Weijie Baba Masakazu Toh Katsuaki Suzuno Mitsushi Toko Kaoru Usami Noritaka Suemasu Takashi
- 出版者
- Elsevier B.V.
- 雑誌
- Journal of crystal growth (ISSN:00220248)
- 巻号頁・発行日
- vol.378, pp.201-204, 2013-09
- 被引用文献数
- 18 1
We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23 meV.